TK8A60DA, N-Channel Power MOSFET, TO-220F-3

The TK8A60DA is a Toshiba π-MOSVII high-voltage N-channel MOSFET designed for high-speed switching applications such as switching power supplies, motor drives, and industrial power control. Featuring low gate drive requirements, fast switching performance, and high energy ruggedness, it’s ideal for designs requiring compact, reliable, and thermally efficient power components.

Key Features:

• 600V Drain-Source Voltage: Suitable for switching regulator and high-voltage power applications.
• Low On-Resistance: R_DS(on) = 0.8 Ω (typical), ensures efficient power handling.
• Fast Switching Times: Turn-on time = 60 ns, turn-off time = 75 ns.
• Low Gate Charge: Total gate charge of 20 nC reduces driving power requirements.
• Avalanche Rated: Single pulse avalanche energy of 270 mJ with I_AR = 7.5 A.
• TO-220F Full-Pack Package: Insulated tab for safe mounting without extra insulation hardware.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 7.5A
• Drain-Source Breakdown Voltage (Vds): 600V
• Gate-Source Threshld Voltage (Vgs th): 2-4V
• Power Dissipation: 45W
• Operating Temprature: -55+150°C