10NM50N, N-Channel 650V Super Junction Power MOSFET, TO-220

The 10NM50N is an N-channel Super Junction Power MOSFET designed for high-voltage, high-speed switching applications. With a drain-source voltage rating of 650 V and a continuous drain current of 10 A, it is well-suited for high-power applications such as power supplies, converters, and motor drivers. The MOSFET's low on-resistance of 0.75 Ω reduces conduction losses, while its fast switching capabilities enhance performance in high-speed circuits. Encased in a standard TO-220 package, the 10NM50N offers robust thermal performance with a maximum power dissipation of 45 W, making it a reliable choice for various power management applications.

• High Drain-Source Voltage: Withstands up to 650 V, suitable for high-voltage applications.
• High Continuous Drain Current: Rated at 10 A, ideal for substantial power requirements.
• Low On-Resistance: Features an R_DS(on) of 0.75 Ω, minimizing conduction losses.
• Fast Switching Speed: Optimized for rapid switching applications, enhancing efficiency.
• Robust Power Dissipation: Capable of dissipating up to 45 W, ensuring reliability under various conditions.
• Standard TO-220 Package: Facilitates easy mounting and efficient heat dissipation.