RJH30E2,N-Channel IGBT with Fast Recovery Diode, TO-220FL

The RJH30E2 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in plasma display panels (PDPs), motor drivers, uninterruptible power supply (UPS) systems, and other power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 360V and a Continuous Collector Current of 30A at 25°C, the RJH30E2 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.5V minimizes conduction losses, while its fast switching capabilities ensure efficient high-speed operation.

The device features a built-in Fast Recovery Diode with a typical forward voltage of 1.4V and a reverse recovery time of 23 ns, enhancing performance in various power applications. Encased in an isolated TO-220FL package, the RJH30E2 offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 360V, suitable for medium-voltage applications.
• Moderate Current Capability: Continuous Collector Current of 30A at 25°C, accommodating various power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.5V, reducing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation with typical rise time (t_r) of 80 ns and fall time (t_f) of 150 ns, enhancing efficiency in switching applications.
• Integrated Fast Recovery Diode: Built-in diode with a typical forward voltage (V_F) of 1.4V and reverse recovery time (t_rr) of 23 ns, improving performance in various power applications.
• Isolated TO-220FL Package: Provides ease of integration into various circuit designs with efficient heat dissipation and electrical isolation.