CT60AM-18F, N-Channel IGBT with Integrated Fast-Recovery Diode, TO-3PL

The CT60AM-18F is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in microwave ovens, electromagnetic cooking devices, rice cookers, and other power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 900V and a Continuous Collector Current of 60A, the CT60AM-18F provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.1V at 25°C minimizes conduction losses, while its integrated fast-recovery diode enhances performance in various power applications.

The device is designed to minimize tail current during turn-off, reducing tail loss and improving efficiency in high-speed switching applications. Encased in a standard TO-3PL package, the CT60AM-18F offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 900V, suitable for high-voltage applications.
• High Current Capability: Continuous Collector Current of 60A, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.1V at 25°C, reducing conduction losses.
• Integrated Fast-Recovery Diode: Enhances performance in various power applications by providing efficient freewheeling.
• Low Tail Loss: Designed to minimize tail current during turn-off, improving efficiency in switching applications.
• Standard TO-3PL Package: Provides ease of integration into various circuit designs with efficient heat dissipation.