FGA180N33, N-Channel IGBT with Low Saturation Voltage, TO-3P Package

The FGA180N33 is a 330V, 180A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Utilizing advanced trench technology, this IGBT ensures low conduction and switching losses, making it ideal for use in plasma display panels (PDPs), power inverters, motor drivers, and other power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 330V and a Continuous Collector Current of 180A at 25°C, the FGA180N33 provides exceptional performance in applications requiring reliable and efficient power switching. The low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.1V minimizes conduction losses, while the fast switching characteristics ensure reduced energy loss during operation.

Encased in a TO-3P package, the FGA180N33 offers excellent thermal performance and robust mechanical design, ensuring reliable operation in demanding environments.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 330V, suitable for medium-voltage applications.
• High Current Capability: Continuous Collector Current of 180A at 25°C, ideal for high-power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.1V, reducing conduction losses.
• Fast Switching Performance: Optimized for high-speed switching with a typical rise time (t_r) of 80 ns, enhancing overall efficiency.
• High Power Dissipation: Rated for 390W power dissipation, supporting demanding operating conditions.
• Standard TO-3P Package: Provides efficient heat dissipation and ease of integration into various circuit designs.