GT60M302, N-Channel IGBT, 300V, 60A

The GT60M302 is an N-Channel IGBT (Insulated-Gate Bipolar Transistor) designed for high-speed switching applications. With a maximum collector-emitter voltage (VCEO) of 300V and an output current of 60A, this IGBT offers high efficiency and reliability for power-intensive applications. Its low saturation voltage helps minimize conduction losses, while its fast switching characteristics make it ideal for use in motor drives, inverters, and switching power supplies.

Housed in a TO-3P package, the GT60M302 provides excellent thermal performance and is a perfect choice for designers seeking a robust, efficient, and reliable IGBT solution for high-power switching applications.

• High Current Capability: Supports up to 60A output current for high-power applications.
• High Voltage Rating: VCEO max of 300V, making it suitable for high-voltage switching applications.
• Fast Switching: Optimized for high-speed switching with low turn-on and turn-off times.
• Low Saturation Voltage: Ensures efficient operation with reduced power losses.
• Compact and Durable Design: Housed in a TO-3P package for excellent thermal management.
• Applications: Suitable for use in motor drives, inverters, and switching power supplies.