IRG4PH50S, N-Channel IGBT with Low Saturation Voltage, TO-247AC

The IRG4PH50S is a 1200V, 57A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for low-frequency switching applications, including motor drives, power inverters, uninterruptible power supplies (UPS), and industrial power control. Built with Generation 4 IGBT technology, this device offers superior switching efficiency, reduced losses, and improved thermal performance compared to earlier models.

With a Collector-Emitter Voltage (V_CES) rating of 1200V and a Continuous Collector Current of 57A at 25°C, the IRG4PH50S is optimized for high-power applications. The low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.47V at 33A ensures minimal conduction losses, maximizing energy efficiency.

The device's fast switching capabilities enable low-loss operation, while the rugged design and improved efficiency make it suitable for various industrial and power conversion applications. Encased in a TO-247AC package, the IRG4PH50S provides excellent thermal performance and robust mechanical durability, ensuring reliable operation in demanding environments.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 1200V, suitable for high-voltage applications.
• High Current Capability: Continuous Collector Current of 57A at 25°C and 33A at 100°C, ensuring robust power handling.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.47V at 33A, minimizing conduction losses.
• Optimized for Low-Frequency Switching: Designed for applications below 1kHz, providing high efficiency and low saturation voltage.
• Fourth-Generation IGBT Technology: Enhanced efficiency, tighter parameter distribution, and improved switching performance over previous generations.
• Standard TO-247AC Package: Provides efficient heat dissipation and ease of integration into various power circuit designs.