NDT455N, N-Channel Enhancement Mode Field Effect Transistor, SOT-223 Package

The NDT455N is an N-channel enhancement mode field effect transistor designed for low-voltage, high-speed power switching applications. With a drain-source voltage rating of 30 V and a continuous drain current of 11.5 A, it is well-suited for applications such as DC motor control and DC/DC conversion. The MOSFET's low on-resistance of 0.015 Ω reduces conduction losses, while its fast switching capabilities enhance performance in high-speed circuits. Encased in a compact SOT-223 package, the NDT455N offers robust thermal performance, making it a reliable choice for various power management applications.

• Low On-Resistance: R_DS(on) of 0.015 Ω at V_GS = 10 V, minimizing conduction losses.
• High Drain-Source Voltage: Withstands up to 30 V, suitable for low-voltage applications.
• High Continuous Drain Current: Rated at 11.5 A, ideal for substantial power requirements.
• Fast Switching Speed: Optimized for rapid switching applications, enhancing efficiency.
• High Power Dissipation: Capable of dissipating up to 3 W, ensuring reliability under various conditions.
• Compact SOT-223 Package: Facilitates easy mounting and efficient heat dissipation.