MTP2P50E,P-Channel Power MOSFET,2A 500V

The MTP2P50E is a high-performance P-Channel Power MOSFET designed for a wide range of high-voltage applications. With a maximum drain current of 2A and a breakdown voltage of 500V, this device ensures reliable operation in high-stress environments. The advanced silicon design minimizes power dissipation and optimizes switching performance. The MOSFET is encased in a TO-220AB package, which ensures robust thermal management, making it suitable for power supply circuits, converters, and motor controls.

This device features a low RDS(on), avalanche energy rating, and fast switching characteristics. Its integrated Source-to-Drain diode ensures improved recovery time, providing added protection during fault conditions. Fully RoHS-compliant, this MOSFET is designed for energy efficiency and enhanced reliability in demanding power applications.

Key Features :

• High Voltage Tolerance: Supports up to 500V drain-source voltage for high-power circuits.
• Robust Current Handling: 2A continuous drain current and pulsed drain current capability of 10A.
• Low RDS(on): Maximum on-resistance of 6Ohm at VGS = -10V for reduced power loss.
• Thermal Efficiency: Maximum power dissipation of 50W with efficient heat dissipation via the TO-220AB package.
• Fast Switching: Turn-on delay time of 12ns and turn-off delay time of 21ns for high-speed applications.
• Avalanche Energy Rated: Engineered to handle high-energy avalanche conditions with ease.