SPW20N60C3,N-Channel MOSFET, 600V, 20.7A, TO-247

The SPW20N60C3 is a high-performance N-Channel MOSFET featuring CoolMOS technology, providing exceptional efficiency in high-power and high-voltage applications. With a drain-source breakdown voltage (Vds) of 600V and a continuous drain current rating of 20.7A at 25C, this MOSFET is ideal for use in power supplies, inverters, motor control, and other industrial power circuits.

The MOSFET's low on-resistance (RDS(on)) of 0.19Ohm ensures minimal energy loss, improving overall system efficiency. The TO-247 package offers superior thermal management, allowing the device to operate reliably in demanding environments. The SPW20N60C3 also features ultra-low gate charge and fast switching speeds, making it suitable for applications that require high-speed switching and low conduction losses.

• High Voltage Capability: Drain-source breakdown voltage (Vds) of 600V, ideal for high-power and high-voltage applications.
• High Current Capacity: Continuous drain current of 20.7A at 25C.
• Low On-Resistance: RDS(on) of 0.19Ohm, minimizing power loss and increasing efficiency.
• CoolMOS Technology: Advanced CoolMOS technology providing ultra-low gate charge and optimized switching performance.
• High Power Dissipation: Supports up to 208W, enabling high-power handling capability.
• Durable TO-247 Package: Designed for high-performance applications with excellent heat dissipation.