FGA70N33BTD, N-Channel IGBT with Low Saturation Voltage, TO-3P

The FGA70N33BTD is a 330V, 70A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Manufactured using trench gate technology, it offers low conduction and switching losses, making it ideal for plasma display panels (PDPs) and other high-frequency power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 330V and a Continuous Collector Current of 70A, the FGA70N33BTD is optimized for applications requiring efficient power switching. The low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.7V reduces conduction losses, improving overall energy efficiency.

The device's fast switching characteristics, combined with an integrated fast recovery diode, enhance performance in power factor correction (PFC) circuits and PDP applications. Encased in a TO-3P package, the FGA70N33BTD provides excellent thermal performance and high durability, ensuring reliable operation.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 330V, ideal for medium-voltage applications.
• High Current Capability: Continuous Collector Current of 70A, ensuring robust power handling.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.7V at 70A, minimizing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation with a turn-on delay time of 13 ns and turn-off delay time of 46 ns.
• Integrated Fast Recovery Diode: Enhances performance in various power applications by providing efficient freewheeling.
• Standard TO-3P Package: Provides efficient heat dissipation and ease of integration into various circuit designs.