GT30F131, 360V 200A N-Channel IGBT,TO-263

The GT30F131 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. With a maximum collector-emitter voltage (V_CEO) of 360V and a continuous collector current of 200A at 25°C, this IGBT is well-suited for demanding power circuits such as motor drivers, UPS systems, power inverters, and industrial automation.

The low collector-emitter saturation voltage (V_CE(sat)) of 1.9V ensures minimal power dissipation and improves system efficiency. Its TO-263 surface-mount package provides excellent thermal performance, allowing reliable operation even in high-temperature environments.

The GT30F131 offers high switching speed and is optimized for applications requiring fast turn-on and turn-off times. With a power dissipation rating of 140W and a maximum operating temperature range up to 175°C, this IGBT is built for durability and high-efficiency energy conversion.

• High Voltage Rating: Supports 360V collector-emitter voltage (V_CEO), ideal for high-power applications.
• High Current Capacity: Capable of handling 200A continuous collector current at 25°C, ensuring reliable performance in demanding power circuits.
• Low Saturation Voltage: Features a low V_CE(sat) of 1.9V, improving efficiency and reducing power loss.
• High Power Dissipation: Rated for 140W power dissipation, providing stable operation in high-energy systems.
• Surface-Mount TO-263 Package: Enables efficient heat dissipation and compact PCB design.
• High Switching Speed: Optimized for fast switching, making it suitable for inverters, motor control, and power conversion applications.