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GT30J127 IGBT - 600V, 200A, TO-220 Package

GT30J127 IGBT - 600V, 200A, TO-220 Package

SKU
SCTx3195
Part Number
GT30J127
Brand:
Generic
Categories:
Semiconductors, Transistors, IGBT
Delivery in 2-5 Weeks.
JOD 1.480
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The GT30J127 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for plasma display panels and other high-power applications. With a breakdown voltage of 600V and a current handling capability of up to 200A, it ensures fast and efficient switching performance.

Featuring a built-in diode for energy recovery, this IGBT is ideal for use in circuits requiring low power dissipation and high voltage stability. Its TO-220 package allows for ease of integration and heat dissipation in compact designs.

Key Features :

  • High voltage rating of 600V.
  • Continuous current of 30A, pulsed current of 200A.
  • TO-220 package for easy installation.
  • Built-in diode for fast recovery.
  • Low switching losses for efficient power management.
  • Ideal for plasma display and energy recovery circuits.
Operating Temperature -55+150C
Mounting Style Through Hole
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Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1-2 Day

Free

Available

Inside Jordan

1 - 3 Days

3 JOD / Free Above 100 JOD

pre-order

General

3-5 Weeks

  

GT30J127 IGBT - 600V, 200A, TO-220 Package

JOD 1.480