GT30J127 IGBT - 600V, 200A, TO-220 Package

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GT30J127 IGBT - 600V, 200A, TO-220 Package

SKU

SCTx3195

Part Number

GT30J127

Brand:

Categories:

JOD 1.48

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Estimated Delivery: 2 - 3 Weeks

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Description

The GT30J127 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for plasma display panels and other high-power applications. With a breakdown voltage of 600V and a current handling capability of up to 200A, it ensures fast and efficient switching performance.

Featuring a built-in diode for energy recovery, this IGBT is ideal for use in circuits requiring low power dissipation and high voltage stability. Its TO-220 package allows for ease of integration and heat dissipation in compact designs.

Key Features :

High voltage rating of 600V.
Continuous current of 30A, pulsed current of 200A.
TO-220 package for easy installation.
Built-in diode for fast recovery.
Low switching losses for efficient power management.
Ideal for plasma display and energy recovery circuits.

Product Information

More Information
Estimated Delivery	2 - 3 Weeks
Operating Temperature	-55+150C
Mounting Style	Through Hole
Max Voltage	N/A

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Shipping and Delivery

Stock	Shipping Method	ETA	Cost
Available	Self Pickup	1-2 Day	Free
Available	Inside Jordan	1 - 3 Days	3 JOD / Free Above 100 JOD
pre-order	General	3-5 Weeks

GT30J127 IGBT - 600V, 200A, TO-220 Package

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