AE  
  • 0 My Wish List
  • My Cart 0
English Jordan English Jordan
GT30J127 IGBT - 600V, 200A, TO-220 Package

GT30J127 IGBT - 600V, 200A, TO-220 Package

SKU
SCTx3195
Part Number
GT30J127
Brand:
Generic
Categories:
Semiconductors, Transistors, IGBT
2-3 Weeks
JOD 1.48
Be the first to review this product
Pre-Order
Add to Wish List
Add to Compare
Ask for Quotation

Ask for Quotation

Guarantee safe & secure checkout

The GT30J127 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for plasma display panels and other high-power applications. With a breakdown voltage of 600V and a current handling capability of up to 200A, it ensures fast and efficient switching performance.

Featuring a built-in diode for energy recovery, this IGBT is ideal for use in circuits requiring low power dissipation and high voltage stability. Its TO-220 package allows for ease of integration and heat dissipation in compact designs.

Key Features :

  • High voltage rating of 600V.
  • Continuous current of 30A, pulsed current of 200A.
  • TO-220 package for easy installation.
  • Built-in diode for fast recovery.
  • Low switching losses for efficient power management.
  • Ideal for plasma display and energy recovery circuits.
More Information
Operating Temperature -55+150C
Mounting Style Through Hole
Max Voltage N/A
Write Your Own Review
Only registered users can write reviews. Please Sign in or create an account
 

Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1-2 Day

Free

Available

Inside Jordan

1 - 3 Days

3 JOD / Free Above 100 JOD

pre-order

General

3-5 Weeks