JORD
GT30J127 IGBT - 600V, 200A, TO-220 Package
JODÂ 1.48
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The GT30J127 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for plasma display panels and other high-power applications. With a breakdown voltage of 600V and a current handling capability of up to 200A, it ensures fast and efficient switching performance.
Featuring a built-in diode for energy recovery, this IGBT is ideal for use in circuits requiring low power dissipation and high voltage stability. Its TO-220 package allows for ease of integration and heat dissipation in compact designs.Key Features :
- High voltage rating of 600V.
- Continuous current of 30A, pulsed current of 200A.
- TO-220 package for easy installation.
- Built-in diode for fast recovery.
- Low switching losses for efficient power management.
- Ideal for plasma display and energy recovery circuits.
| Estimated Delivery | Lead Time 4-6 Weeks |
|---|---|
| Operating Temperature | -55+150C |
| Mounting Style | Through Hole |
| Max Voltage | N/A |
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|
Stock |
Shipping Method |
ETA |
Cost |
|
 |
Available |
Self Pickup |
1-2 Day |
Free |
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Available |
Inside Jordan |
1 - 3 Days |
3 JOD / Free Above 100 JOD |
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pre-order |
General |
3-5 Weeks |