FQP70N10,N-Channel MOSFET,100V,57A,TO-220-3

The FQP70N10 is a high-power, N-channel MOSFET designed for efficient switching and power management in various applications. With a Drain-Source Breakdown Voltage (Vds) of 100V and a Continuous Drain Current (Id) of 57A, this MOSFET is ideal for power supplies, switching regulators, motor control systems, and other high-current applications.

This MOSFET features a low Gate-Source Threshold Voltage (Vgs th) of 2.0V to 4.0V, making it easy to control and ensuring fast switching performance. Its robust design allows it to dissipate up to 160W, ensuring reliable performance even in high-power applications.

Packaged in the compact TO-220-3 form, the FQP70N10 offers excellent thermal performance and is easy to mount in through-hole designs. It operates across a wide temperature range from -55C to +175C, making it suitable for both industrial and consumer electronics applications.

• High Current Capacity: Continuous Drain Current (Id) rated at 57A, ideal for high-power applications.
• High Voltage Handling: Capable of handling up to 100V Drain-Source Breakdown Voltage (Vds).
• Low Gate Threshold Voltage: 2.0V to 4.0V, ensuring easy control and fast switching.
• High Power Dissipation: Can dissipate up to 160W, perfect for heavy-duty power applications.
• Compact TO-220 Package: Ensures effective heat dissipation and is easy to integrate into various designs.
• Wide Operating Temperature Range: Operates efficiently from -55C to +175C, suitable for a wide range of environments.