FQP13N06, N-Channel MOSFET, TO-220

The FQP13N06 is an N-channel enhancement mode power MOSFET designed using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced technology minimizes on-state resistance and provides superior switching performance, making it suitable for low-voltage applications such as DC/DC converters and high-efficiency switching for power management in portable and battery-operated products. With a drain-source voltage rating of 60 V and a continuous drain current of 13 A, the FQP13N06 offers efficient performance in high-current applications. Its low gate charge facilitates fast switching, and the device is 100% avalanche tested to ensure reliability under extreme conditions. Encased in a standard TO-220 package, the FQP13N06 provides efficient heat dissipation, making it a reliable choice for various power applications.

• Low On-Resistance: R_DS(on) of 0.135 Ω at V_GS = 10 V, minimizing conduction losses.
• High Continuous Drain Current: Rated at 13 A, suitable for high-current applications.
• Low Gate Charge: Total gate charge (Q_g) of 5.8 nC, enabling fast switching.
• Low Crss: Reverse transfer capacitance of 15 pF, reducing noise susceptibility.
• 100% Avalanche Tested: Ensures robust performance under extreme conditions.
• High Temperature Operation: Maximum junction temperature of 175°C, suitable for demanding environments.