FQA8N100C,N-Channel QFET MOSFET,1000V,8A

SKU
SCTx3147
Part Number
FQA8N100C
Delivery in 2-5 Weeks.
Pre-Order
Out Of Stock

Notify me when this product is available:

Guarantee safe & secure checkout

The FQA8N100C is a high-voltage, N-Channel QFET MOSFET designed for advanced switching applications. With a maximum drain-source breakdown voltage of 1000V and continuous current rating of 8A, it is ideal for high-efficiency power supplies and motor drives. Manufactured using Fairchild Semiconductor's proprietary process, this device offers low on-resistance, minimized gate charge, and excellent thermal characteristics.

It is capable of withstanding high energy pulses in the avalanche mode, making it suitable for both linear and switching applications. The TO-3PN package allows for effective thermal management, ensuring reliability in demanding environments.

Key Features :

  • High drain-source breakdown voltage of 1000V for industrial-grade applications.
  • Low static drain-source on-resistance (Rds(on)) for efficient operation.
  • High peak avalanche current capability for reliable performance.
  • Excellent thermal characteristics with a maximum junction temperature of 150C.
  • Low gate charge for improved switching performance.
  • Designed for high-voltage and high-current applications.
More Information
Mounting Style Through Hole
Max Voltage N/A
Write Your Own Review
Only registered users can write reviews. Please Sign in or create an account
 

Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1-2 Day

Free

Available

Inside Jordan

1 - 3 Days

3 JOD / Free Above 100 JOD

pre-order

General

3-5 Weeks