FDPF33N25T,N-Channel UniFET™ MOSFET, Through-Hole

The FDPF33N25T is an N-channel UniFET™ MOSFET designed for high-efficiency switching applications. With a maximum drain-source voltage of 250 V and a continuous drain current capability of 33 A at 25°C, it is suitable for various power conversion applications. The MOSFET features a low on-resistance of 94 mΩ (Max) at V_GS = 10 V, I_D = 16.5 A, ensuring minimal conduction losses. Its low gate charge (typical 36.8 nC) and low reverse transfer capacitance (typical 39 pF) contribute to efficient and fast switching performance. The device is housed in a thermally efficient TO-220F package, enhancing its reliability in demanding applications.

• Low On-Resistance – R_DS(on) of 94 mΩ (Max) at V_GS = 10 V, I_D = 16.5 A, ensuring efficient performance.
• High Current Handling – Capable of continuous drain current up to 33 A at 25°C.
• Low Gate Charge – Typical gate charge of 36.8 nC, facilitating efficient switching.
• Low Crss – Typical reverse transfer capacitance of 39 pF, enhancing switching performance.
• High Voltage Tolerance – Withstands a drain-source voltage (V_DSS) of up to 250 V.
• Thermally Efficient Package – Encased in a TO-220F package, providing effective heat dissipation.