BDV65C, NPN Silicon Power Darlington Transistor, TO-218

The BDV65C is an NPN silicon power Darlington transistor housed in a TO-218 package. It is designed for high-power applications, supporting a continuous collector current of 12 A and a collector-emitter voltage of 120 V. The transistor features a low collector-emitter saturation voltage, with a maximum of 2.0 V at 5 A, ensuring efficient operation. With a high DC current gain, the BDV65C provides strong amplification, making it suitable for audio output stages and general amplifier and switching applications. It is designed to complement the BDV64 series, facilitating push-pull configurations in amplifier designs. The device can dissipate up to 125 W at a case temperature of 25°C, highlighting its robust power handling capabilities.

• High Collector Current: Supports up to 12 A, suitable for high-power applications.
• High Collector-Emitter Voltage: Rated at 120 V, enabling operation in moderate voltage circuits.
• Low Collector-Emitter Saturation Voltage: Maximum of 2.0 V at 5 A, ensuring efficient performance.
• High DC Current Gain: Minimum h_FE of 1000 at 4 V, 5 A, providing strong amplification.
• Complementary Pairing: Designed to complement the BDV64 series for push-pull configurations.
• Robust Power Dissipation: Capable of dissipating up to 125 W at 25°C case temperature.