2SK2699,Silicon N-Channel MOS Type,600V,12A,TO-3P

The 2SK2699 is a high-speed, high-voltage silicon N-channel MOSFET designed for chopper regulator, DC-DC converter, and motor drive applications. It features low drain-source on-resistance, high forward transfer admittance, and low leakage current.

Key Features :

• High Voltage and Current Handling: Capable of withstanding a drain-source voltage (VDSS) of up to 600V and a continuous drain current of 12A, ideal for robust power applications.
• Low ON Resistance: Offers an RDS(ON) value of 0.5Ω (typical), ensuring efficient power delivery and low losses during operation.
• High-Speed Switching: Features fast rise and fall times (45 ns and 65 ns, respectively), optimizing performance in high-frequency circuits.
• Enhanced Thermal Stability: Equipped with thermal resistance values of 0.833°C/W (channel to case), ensuring reliable operation under high-temperature conditions.
• Built-in Avalanche Energy Handling: Supports repetitive avalanche energy (EAR) of 15mJ, enhancing reliability in transient conditions.
• Compact and Durable Design: Packaged in JEITA SC-65 for streamlined integration into various designs, with robust structural integrity for long-term use.