MJ11016,High-Current NPN Darlington Silicon Transistor,120V 30A,TO-204

The MJ11016 is a high-performance NPN Darlington transistor designed for high-current applications in power amplifiers and industrial systems. With a maximum collector current of 30A and a collector-emitter sustaining voltage of 120V, it provides exceptional performance and reliability for demanding applications. Featuring an integrated monolithic structure with a built-in base-emitter shunt resistor, the MJ11016 minimizes leakage current and simplifies circuit design. Its TO-204 (TO-3) metal package ensures excellent thermal performance and durability under high power conditions.

This device is ideal for use in complementary pairs with the MJ11015 PNP transistor, enabling versatile configurations for power amplification and switching. With high DC current gain (hFE ≥ 1000 at IC = 20A), it delivers efficient amplification and robust performance across a wide range of operating conditions.

Key Features :

• High Voltage Rating: Collector-emitter voltage (VCEO) up to 120V ensures safe operation in high-power circuits.
• High Current Capability: Supports a continuous collector current of 30A, suitable for demanding applications.
• High DC Current Gain: hFE of 1000 (minimum) at IC = 20A, ensuring efficient amplification.
• Robust Thermal Design: TO-204 (TO-3) package provides excellent heat dissipation.
• Complementary Pairing: Designed to work with the MJ11015 PNP transistor for versatile configurations.
• High Operating Temperature: Capable of withstanding junction temperatures up to 200°C for reliable performance.