KSP43, NPN Epitaxial Silicon Transistor, 200V , 625mW

The KSP43 is a high-performance NPN epitaxial silicon transistor designed for applications requiring high voltage and efficient switching. With a maximum Collector-Emitter Voltage of 200V and a power dissipation capacity of 625mW, this transistor is suitable for a wide range of electronic applications. It features a compact TO-92 package, making it ideal for through-hole mounting and ensuring ease of integration into existing circuits.

Key Features :

• High voltage handling with a Collector-Emitter Voltage (VCEO) of up to 200V.
• Low saturation voltage for efficient switching applications.
• Compact TO-92 package for through-hole mounting.
• Maximum power dissipation of 625mW ensures reliability in various applications.
• Operating junction temperature range of -55°C to 150°C for robust performance.
• Suitable for audio amplifier and switching circuits.