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The IRF820 is a high-voltage N-channel PowerMOSFET designed using STMicroelectronics' advanced PowerMESH technology. With a maximum voltage rating of 500V and a drain current of up to 2.5A, this MOSFET is ideal for high-current, high-speed switching applications.
Its minimized gate charge and very low intrinsic capacitances make it highly efficient in power supply and motor driver circuits. Additionally, it is fully avalanche tested, ensuring robust performance in demanding environments.Key Features :
Operating Temperature | -55C To +150C |
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Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1-2 Day |
Free |
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Available |
Inside Jordan |
1 - 3 Days |
3 JOD / Free Above 100 JOD |
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pre-order |
General |
3-5 Weeks |