IRF830,N-Channel Power MOSFET, 500V, 4.5A,TO-220-3

The IRF830 - TO-220-3 is a high-voltage N-channel MOSFET designed for efficient power switching and control applications. With a Drain-Source Breakdown Voltage (Vds) of 500V and a Continuous Drain Current (Id) of 4.5A, this MOSFET is ideal for applications requiring robust performance, such as power supplies, DC-DC converters, motor controls, and inverters.

The IRF830 features a low Gate-Source Threshold Voltage (Vgs th) ranging from 2V to 4V, allowing for easy control and fast switching. The MOSFET is designed to minimize energy loss with its low on-resistance, making it suitable for high-efficiency power systems.

Packaged in a compact TO-220-3 form factor, this MOSFET offers high thermal performance with a power dissipation capability of up to 74W, ensuring reliable operation even in demanding environments. The IRF830 can operate over a wide temperature range of -55C to +150C, making it perfect for both industrial and consumer electronics.

• High Drain-Source Breakdown Voltage: 500V, making it suitable for high-voltage applications.
• N-Channel MOSFET: Provides excellent switching performance and fast switching speeds.
• Continuous Drain Current: 4.5A, ensuring effective performance in power switching circuits.
• Low Gate-Source Threshold Voltage: 2V to 4V, offering easy triggering and control.
• Power Dissipation: Up to 74W, capable of handling high power loads.
• Compact TO-220-3 Package: Easy to integrate into various power supply designs and PCB layouts.