IRFBE30,N-Channel Power MOSFET,800V,3A

SKU
SCTx3010
Part Number
IRFBE30
Delivery in 2-5 Weeks.
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The IRFBE30 is an advanced N-channel Power MOSFET designed for high-voltage and high-speed switching applications. With a maximum drain-source voltage of 800V and a drain current of 3A, this MOSFET is well-suited for demanding applications such as industrial power supplies, motor drives, and high-voltage converters. The TO-220AB package offers excellent thermal and electrical performance while ensuring reliability in harsh environments.

This MOSFET features fast switching times, a low gate charge, and repetitive avalanche rating, ensuring efficient operation even under challenging conditions. Its low on-resistance minimizes power losses and enhances efficiency, while its rugged silicon design provides high durability. The IRFBE30 supports a wide operating junction temperature range from -55C to +150C, ensuring dependable performance across a broad spectrum of applications.

The IRFBE30 MOSFET is a versatile component for engineers and designers, providing an excellent balance between performance and cost for high-voltage power applications.

Key Features :

  • High Voltage Capability: Maximum drain-source voltage of 800V for high-power applications.
  • Fast Switching Performance: Low gate charge (Qg = 45nC) enables quick response.
  • Rugged Design: Repetitive avalanche rating ensures durability under transient conditions.
  • Low On-Resistance: RDS(on) of 3Ohm minimizes power loss and improves efficiency.
  • Wide Temperature Range: Operates reliably from -55C to +150C junction temperature.
  • Compact Package: TO-220AB package with excellent thermal resistance (0.5C/W).
Operating Temperature -55C To +150C
Mounting Style Through Hole
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3-5 Weeks