IRFBE30,N-Channel Power MOSFET,800V,3A

The IRFBE30 is an advanced N-channel Power MOSFET designed for high-voltage and high-speed switching applications. With a maximum drain-source voltage of 800V and a drain current of 3A, this MOSFET is well-suited for demanding applications such as industrial power supplies, motor drives, and high-voltage converters. The TO-220AB package offers excellent thermal and electrical performance while ensuring reliability in harsh environments.

This MOSFET features fast switching times, a low gate charge, and repetitive avalanche rating, ensuring efficient operation even under challenging conditions. Its low on-resistance minimizes power losses and enhances efficiency, while its rugged silicon design provides high durability. The IRFBE30 supports a wide operating junction temperature range from -55C to +150C, ensuring dependable performance across a broad spectrum of applications.

The IRFBE30 MOSFET is a versatile component for engineers and designers, providing an excellent balance between performance and cost for high-voltage power applications.

Key Features :

• High Voltage Capability: Maximum drain-source voltage of 800V for high-power applications.
• Fast Switching Performance: Low gate charge (Qg = 45nC) enables quick response.
• Rugged Design: Repetitive avalanche rating ensures durability under transient conditions.
• Low On-Resistance: RDS(on) of 3Ohm minimizes power loss and improves efficiency.
• Wide Temperature Range: Operates reliably from -55C to +150C junction temperature.
• Compact Package: TO-220AB package with excellent thermal resistance (0.5C/W).