FS10SM-18A, N-Channel Power MOSFET, TO-3P Package

The FS10SM-18A is an N-channel power MOSFET designed for high-speed switching applications. With a drain-source voltage rating of 900 V and a continuous drain current of 10 A, it is well-suited for high-voltage, high-power applications. The MOSFET's low on-resistance of 1.2 Ω reduces conduction losses, while its fast switching speed, characterized by a rise time of 46 ns, enhances performance in high-speed circuits. Encased in a standard TO-3P package, the FS10SM-18A offers robust thermal performance with a maximum power dissipation of 200 W, making it a reliable choice for various power management applications.

• High Drain-Source Voltage: Withstands up to 900 V, suitable for high-voltage applications.
• High Continuous Drain Current: Rated at 10 A, ideal for substantial power requirements.
• Low On-Resistance: Features an R_DS(on) of 1.2 Ω, minimizing conduction losses.
• Fast Switching Speed: Rise time of 46 ns, enhancing efficiency in high-speed applications.
• Robust Thermal Performance: Maximum power dissipation of 200 W, ensuring reliability under various conditions.
• Standard TO-3P Package: Facilitates easy mounting and efficient heat dissipation.