IRG4PF50WD, N-Channel IGBT with Ultrafast Soft Recovery Diode, TO-247AC

The IRG4PF50WD is an N-Channel Insulated Gate Bipolar Transistor (IGBT) optimized for use in welding applications, switch-mode power supplies (SMPS), induction heating, and high-frequency inverters. It incorporates trench gate field-stop technology, ensuring lower conduction and switching losses while maintaining superior efficiency.

With a Collector-Emitter Voltage (V_CES) rating of 900V and a Continuous Collector Current of 51A, the IRG4PF50WD is designed for high-voltage power applications. The low Collector-Emitter Saturation Voltage (V_CE(on)) of 2.25V reduces conduction losses, improving overall power efficiency.

This IGBT is co-packaged with an ultrafast soft recovery diode, enhancing efficiency by minimizing switching losses, EMI, and noise. It also supports high-frequency operation up to 100kHz, making it an ideal replacement for larger-die MOSFETs in power applications.

The TO-247AC package ensures ease of integration into a variety of power applications, offering excellent thermal performance and high reliability.

• High Voltage Capability: Collector-Emitter Voltage (V_CES) rating of 900V, suitable for high-voltage applications.
• High Current Handling: Continuous Collector Current of 51A at 25°C, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(on)) of 2.25V at 28A, reducing conduction losses.
• Fast Switching Performance: Designed for high-speed operation with optimized switching losses, improving system efficiency.
• Short Circuit Capability: Withstands short circuits, enhancing system reliability.
• Integrated Ultrafast Soft Recovery Diode: Co-packaged with HEXFRED™ ultrafast diode, reducing noise and EMI while minimizing switching losses.