K8A50D, N-Channel MOSFET for Switching Regulator Applications,Through Hole

The K8A50D is a silicon N-channel MOSFET designed for switching regulator applications. It features a low drain-source on-resistance (R_DS(ON)) of 0.7 Ω (typical), which enhances efficiency in switching operations. The device offers a high forward transfer admittance (|Y_fs|) of 4.0 S (typical), ensuring effective signal amplification. With a low leakage current (I_DSS) of 10 μA (maximum) at V_DS = 500 V, it minimizes power loss during operation. Operating in enhancement mode with a gate threshold voltage (V_th) ranging from 2.0 to 4.0 V, the K8A50D provides reliable switching performance. It supports a maximum drain-source voltage (V_DSS) of 500 V and can handle a maximum drain current (I_D) of 8 A, making it suitable for various high-voltage power applications.

• Low Drain-Source On-Resistance – Features a typical R_DS(ON) of 0.7 Ω, enhancing efficiency in switching applications.
• High Forward Transfer Admittance – Offers a typical |Y_fs| of 4.0 S, ensuring effective signal amplification.
• Low Leakage Current – Exhibits a maximum I_DSS of 10 μA at V_DS = 500 V, minimizing power loss.
• Enhancement Mode Operation – Operates with a gate threshold voltage (V_th) ranging from 2.0 to 4.0 V, providing reliable switching performance.
• High Voltage Tolerance – Supports a maximum drain-source voltage (V_DSS) of 500 V, suitable for high-voltage applications.
• Moderate Current Handling – Capable of handling a maximum drain current (I_D) of 8 A, ideal for various power applications.