IRGPS40B120U, N-Channel UltraFast IGBT with Ultrafast Soft Recovery Diode, Super-247

The IRGPS40B120U is an N-Channel UltraFast Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in motor drives, induction heating, and high-frequency inverters.

With a Collector-Emitter Voltage (V_CES) rating of 1200V and a Continuous Collector Current of 40A at 100°C, the IRGPS40B120U provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(on)) of 3.12V at 25°C minimizes conduction losses, while its fast switching capabilities ensure efficient high-speed operation.

The device is designed to withstand short circuit conditions for up to 10µs, enhancing its reliability in fault scenarios. Additionally, it features an integrated ultrafast soft recovery anti-parallel diode, improving overall performance in switching applications.

Encased in a Super-247™ package, the IRGPS40B120U offers ease of integration into various circuit designs.

• High Voltage Capability: Collector-Emitter Voltage (V_CES) rating of 1200V, suitable for high-voltage applications.
• Moderate Current Handling: Continuous Collector Current of 40A at 100°C, accommodating various power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(on)) of 3.12V at 25°C, reducing conduction losses.
• Fast Switching Performance: Designed for high-speed operation with low switching losses, enhancing efficiency in switching applications.
• Short Circuit Capability: 10µs short circuit withstand time, enhancing reliability in fault conditions.
• Integrated Ultrafast Soft Recovery Diode: Features an ultrafast soft recovery anti-parallel diode for improved performance.