HGTG40N60B3, 600V 70A N-Channel IGBT, TO-247

The HGTG40N60B3 is a high-efficiency, high-speed N-channel IGBT (Insulated Gate Bipolar Transistor) developed using Fairchild’s HDTM (High Energy Density Trench) process. It combines the low conduction loss of a bipolar transistor with the high-speed switching of a MOSFET, making it well-suited for demanding power switching applications. With a 600V collector-emitter voltage rating and the ability to handle 70A continuous collector current, this device is ideal for use in motor drives, UPS systems, welders, and power inverters. Its low V_CE(sat) and short-circuit ruggedness enhance efficiency and reliability in high-power designs. The TO-247 package offers excellent thermal performance and compatibility with standard heatsink configurations.

Key Features:

• High Current Capability: 70A continuous collector current at 25°C.
• High Voltage Rating: 600V collector-emitter voltage for demanding industrial power applications.
• Short-Circuit Rated: Withstands 10 µs at 10V or 2 µs at 15V.
• Low Saturation Voltage: V_CE(sat) as low as 1.4V @ 40A, enhancing conduction efficiency.
• Fast Switching: Turn-on time of 47 ns, fall time as low as 50 ns.
• Robust Thermal Performance: Power dissipation up to 290W with Rθ_JC of 0.43°C/W.

Additional Specifications:

• Mounting Style: Through Hole
• Collector-Emitter Voltage (VCEO) : 600V
• Maximum Gate Emitter Voltage: 30V
• Continuous Collector Current at 25 C: 70A
• Power Dissipation: 290W
• Operating Temperature Range: -55+150°C