IRG4PH50uD,Insulated Gate Bipolar Transistor (IGBT),1200V,45A

The IRG4PH50UD is a high-efficiency insulated gate bipolar transistor (IGBT) designed to deliver excellent performance for high-frequency switching applications. With a Collector-Emitter Breakdown Voltage (V_CES) of 1200V and a continuous collector current of 45A, this IGBT is capable of handling demanding electrical loads. It features an integrated ultrafast soft recovery diode (HEXFRED™), which ensures smoother operation with minimized losses. The TO-247AC package provides robust and reliable housing, making it suitable for applications such as inverters, motor drives, and power supplies. Its high efficiency and high-speed switching characteristics make it an ideal choice for a wide range of industrial applications.

• High Voltage Capability: Supports up to 1200V Collector-Emitter Breakdown Voltage (VCES).
• High Current Handling: Continuous collector current of 45A at 25°C.
• Efficient Switching: Optimized for frequencies up to 40 kHz in hard switching and over 200 kHz in resonant mode.
• Integrated Soft Recovery Diode: Includes a HEXFRED™ ultrafast soft recovery diode for improved performance.
• TO-247AC Package: Industry-standard package offering easy installation and high heat dissipation.
• Versatile Applications: Suitable for various applications such as inverters, motor drives, and switching power supplies.