IXGX120N60B,N-Channel IGBT,600V,200A

The IXGX120N60B is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-frequency switching applications such as motor drives, UPS systems, DC choppers, and industrial automation.

With a maximum collector-emitter voltage of 600V and a continuous collector current of 200A at 25°C, the IXGX120N60B provides superior power handling. The low collector-emitter saturation voltage (V_CE(sat)) of 2.1V reduces conduction losses, making it an efficient solution for power-intensive designs.

The IGBT is optimized for fast switching, featuring a turn-on delay of 60ns and a turn-off delay of 200ns, ensuring minimal switching losses. With a power dissipation rating of 560W, it is designed for robust and reliable performance in demanding industrial applications.

Encased in the PLUS247 package, the IXGX120N60B offers excellent heat dissipation, making it suitable for high-density power designs, renewable energy systems, and high-speed power switching applications.

• High Voltage Capability: Supports 600V collector-emitter voltage (V_CEO), making it ideal for high-power applications.
• High Current Handling: Delivers 200A continuous collector current at 25°C, ensuring reliable performance in demanding power circuits.
• Low Saturation Voltage: Features a V_CE(sat) of 2.1V, reducing conduction losses for improved efficiency.
• Fast Switching Performance: Optimized for high-frequency operation, with turn-on delay of 60ns and turn-off delay of 200ns.
• High Power Dissipation: Rated for 560W power dissipation, ensuring robust thermal performance in power electronics.
• PLUS247 Package: Provides enhanced thermal management for industrial and power conversion applications.