The 2SK215 is a high-voltage N-Channel MOSFET designed for high-frequency and low-frequency power amplification, high-speed switching, and signal amplification. It is built using advanced silicon enhancement-mode technology, ensuring superior switching performance and low conduction losses.
With a Drain-Source Voltage (Vds) of 180V and a Continuous Drain Current (Id) of 0.5A, the 2SK215 is optimized for use in power amplifiers, industrial automation, and communication systems. The low gate drive voltage requirement enables direct logic-level operation, reducing the need for complex drive circuitry.
Encased in a TO-220AB package, this MOSFET ensures excellent heat dissipation and long-term reliability, making it a preferred choice for switching regulators, amplifier designs, and motor control circuits. Whether used in industrial equipment, RF applications, or consumer electronics, the 2SK215 provides high efficiency, low noise, and outstanding durability.
Key Features:- High Voltage Rating: Supports up to 180V Drain-Source Breakdown Voltage (Vds) for high-power applications.
- Efficient Current Handling: Operates with a Continuous Drain Current (Id) of 0.5A, making it suitable for power amplifier circuits.
- Low Gate Threshold Voltage: Enhances efficiency with a Gate-Source Threshold Voltage (Vgs(th)) of 0.2V - 1.5V.
- Fast Switching Capability: Designed for high-speed power switching and low-frequency and high-frequency amplifier applications.
- Reliable TO-220AB Package: Provides better thermal dissipation and durability, making it ideal for demanding applications.
- Wide Operating Temperature Range: Functions in extreme environments with an operating temperature range from -45°C to +150°C.
UAE (INT)
