FGA90N33ATD, Trench IGBT with Fast Recovery Diode, TO-3P

The FGA90N33ATD is a 330V, 90A Trench Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Developed with trench gate field-stop technology, this IGBT ensures reduced switching losses and enhanced efficiency in power supplies, motor drives, and high-frequency inverters.

With a Collector-Emitter Voltage (V_CE) rating of 330V and a Continuous Collector Current of 90A, the FGA90N33ATD delivers robust performance in demanding power applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) minimizes conduction losses, while the integrated fast recovery diode further reduces power dissipation during switching.

Encased in a TO-3P package, the FGA90N33ATD offers excellent thermal performance, making it suitable for applications requiring efficient heat dissipation. This device is widely used in consumer electronics, industrial automation, and energy conversion systems.

• High Voltage Rating: Collector-Emitter Voltage (V_CE) rating of 330V, suitable for medium-voltage applications.
• High Current Capability: Continuous Collector Current of 90A at 25°C, ideal for high-power applications.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.1V, minimizing conduction losses.
• TO-3P Package: Standard TO-3P package for through-hole mounting, providing excellent heat dissipation and ease of integration.
• Integrated Fast Recovery Diode: Improves efficiency and reduces switching losses in various power applications.
• Fast Switching: Designed with trench gate field-stop technology, ensuring efficient high-speed switching.