IRFB5620 ,N-Channel MOSFET ,200V 25A TO-220-3

The IRFB5620 is a high-performance N-channel MOSFET designed for a wide range of power applications. This device features a low on-state resistance (Rds(on)) of 72.5 mOhm, which enhances its efficiency, making it ideal for high-speed switching and high-efficiency power conversion systems. With a maximum drain-source voltage of 200V and a continuous drain current of 25A, the IRFB5620 is well-suited for use in switching regulators, motor control, DC-DC converters, and other applications requiring reliable high-power switching performance.

The TO-220-3 package provides excellent thermal management and mechanical robustness, ensuring reliable operation in both commercial and industrial applications. The device is avalanche tested and offers a high maximum operating junction temperature of 175C, ensuring durability in demanding environments.

Key Features :

• High Voltage Handling: Can handle up to 200V of drain-source breakdown voltage, making it suitable for high-voltage switching applications.
• Low On-Resistance: With an R_DS(on) of 72.5 mOhm, it ensures efficient switching with minimal power losses.
• High Continuous Current: Capable of handling up to 25A continuous current, making it appropriate for power conversion and motor control applications.
• Temperature Resilience: Designed to operate reliably in high-temperature environments, with a maximum junction temperature of 175C.
• Fast Switching Speed: Optimized for high-speed switching, ideal for use in fast-switching power supplies and converters.
• Enhanced Avalanche Energy Capability: 100% avalanche tested, ensuring robust operation in harsh environments with frequent voltage spikes.