STP3NK90Z,N-Channel Power MOSFET 900V 3A

The STP3NK90Z is a high-performance N-channel SuperMESH Power MOSFET designed for high-voltage switching applications. Featuring a drain-source breakdown voltage of 900V and a continuous drain current of 3A at 25C, this device ensures reliable operation under high voltage and current demands. Its low gate charge and intrinsic capacitance reduce power losses and make it highly efficient for use in switching power supplies and other demanding environments. The TO-220 package offers excellent thermal performance, while Zener protection ensures robustness in adverse conditions.

Key Features :

• High voltage capability with a drain-source breakdown voltage of 900V.
• Continuous drain current of 3A at 25C and 1.8A at 100C.
• Low on-resistance with a typical RDS(on) of 3.6Ohm.
• Gate-source threshold voltage ranging from 3V to 4.5V, ensuring stable operation.
• Low intrinsic capacitance for improved switching efficiency.
• Fully Zener-protected for enhanced durability and reliability.