2SJ78,P-Channel MOSFET,-200V,30W Power Dissipation

The 2SJ78 is a silicon P-Channel MOSFET developed by Hitachi for high-frequency and low-frequency power amplification, as well as high-speed power switching applications. This enhancement-mode MOSFET features high forward transfer admittance, excellent frequency response, and low on-resistance, making it suitable for both high-speed switching and amplification tasks.

It is part of a complementary pair with 2SK213, 2SK214, 2SK215, and 2SK216, further expanding its application range. Its TO-220AB package ensures direct mounting capability with enhanced thermal performance. Whether used in audio amplifiers, DC-DC converters, or high-power switching circuits, the 2SJ78 delivers reliability and efficiency.

Key Features :

• Drain-Source Breakdown Voltage (Vdss): -200V, ensuring high voltage handling capability.
• Continuous Drain Current (Id): -500mA for robust current control in circuits.
• Gate-Source Voltage (Vgs): +/-15V for enhanced switching operations.
• Power Dissipation (Pch): 30W, allowing reliable performance in power-intensive applications.
• Input Capacitance (Ciss): 120pF for efficient high-speed switching.
• Package Type: TO-220AB for ease of mounting and superior thermal performance.