IRFB52N15D,N-Channel HEXFET Power MOSFET,150V,51A,TO-220-3

The IRFB52N15D is a high-performance N-Channel HEXFET Power MOSFET designed for a wide range of power switching applications. With a drain-source voltage rating of 150V and a continuous drain current capacity of 51A, this device is engineered to handle demanding environments while maintaining high efficiency. Featuring a low on-resistance of 32mΩ, the IRFB52N15D reduces power dissipation, making it ideal for DC-DC converters, motor drives, and power supplies.

This MOSFET is designed with fast switching speeds, characterized capacitance, and minimized input gate charge, allowing for improved energy efficiency. It is also equipped with avalanche ruggedness and enhanced dv/dt capability, which provide robust operation across various industrial, automotive, and consumer electronic applications. The TO-220-3 package ensures ease of installation and effective thermal performance, allowing for versatile use in both professional and DIY projects.

• High Voltage Handling: Supports up to 150V drain-source voltage, ideal for high-power applications.
• High Current Capability: Continuous drain current up to 51A at 25C, ensuring efficient performance.
• Low On-Resistance: RDS(on) of 32mΩ provides low power dissipation and improved efficiency.
• TO-220 Package: Compact design, suitable for through-hole mounting and various industrial uses.
• Reliable Performance: Fully characterized for capacitance and avalanche energy, ensuring robust and reliable operation.
• Wide Temperature Range: Operates efficiently between -55C to 175C, suitable for diverse environments.