KU605, NPN Power Switching Transistor, TO-3

The KU605 is a silicon NPN power switching transistor designed for use in switching and control circuits. It is capable of dissipating up to 50W of power and can handle a maximum collector current of 10A, making it suitable for high-power applications. The transistor can withstand a maximum collector-base voltage of 200V and a collector-emitter voltage of 100V, providing high voltage tolerance. Encapsulated in a durable TO-3 package, the KU605 ensures reliability in demanding environments. With a transition frequency of 5 MHz, it is suitable for various applications requiring efficient switching performance.

• High Power Dissipation – Capable of dissipating up to 50W, suitable for power switching applications.
• High Voltage Tolerance – Withstands a maximum collector-base voltage (V_CB) of 200V and a collector-emitter voltage (V_CE) of 100V.
• High Current Capacity – Supports a maximum collector current (I_C) of 10A, ideal for high-current applications.
• Robust Construction – Encapsulated in a durable TO-3 package, ensuring reliability in demanding environments.
• Silicon NPN Transistor – Utilizes silicon material for efficient performance in switching and control circuits.
• Moderate Transition Frequency – Features a transition frequency (f_T) of 5 MHz, suitable for various applications.