TIP112,TO-220,Darlington NPN Transistor - 100V,2A

The TIP112 is a silicon epitaxial-base NPN Darlington power transistor designed for use in medium power linear and switching applications. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. This transistor is built in a TO-220 package, offering efficient thermal performance for various applications such as industrial linear amplifiers, power switches, and control circuits.

With a maximum collector-emitter voltage of 100V and a continuous collector current of 2A, the TIP112 provides excellent performance in environments requiring high gain and reliable switching. Its robust design ensures optimal operation even under demanding conditions, making it ideal for use in industrial and consumer electronic devices.

Key Features :

• Complementary PNP/NPN Devices: TIP112 complements TIP117 for ease in designing push-pull amplifiers.
• Monolithic Darlington Configuration: Ensures high DC gain and low leakage currents.
• Integrated Collector-Emitter Diode: Built-in protection for added safety in circuits.
• High Voltage Capability: Collector-emitter sustaining voltage (VCEO) up to 100V.
• High DC Current Gain (hFE): Typical gain of 1000 at 2A for reliable amplification.
• TO-220 Package: Provides excellent thermal performance and easy mounting.