1MBH50D-060S, N-Channel Molded IGBT with Fast Recovery Diode, TO-3PL

The 1MBH50D-060S is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in inverters for motor drives, AC and DC servo drive amplifiers, uninterruptible power supplies (UPS), and other power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 600V and a Continuous Collector Current of 50A at 100°C, the 1MBH50D-060S provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 3.0V minimizes conduction losses, enhancing overall efficiency.

The device's fast switching capabilities, characterized by soft switching with low switching surge and noise, make it suitable for high-frequency applications. The integrated fast recovery diode further enhances performance in various power applications. Encased in a compact TO-3PL package, the 1MBH50D-060S offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 600V, suitable for medium to high-voltage applications.
• Moderate Current Capability: Continuous Collector Current of 50A at 100°C, accommodating various power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 3.0V, reducing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation with soft switching characteristics, minimizing switching surge and noise.
• Integrated Fast Recovery Diode: Enhances performance in various power applications by providing efficient freewheeling.
• Compact Molded Package: Small TO-3PL package design allows for efficient heat dissipation and ease of integration into various circuit designs.