2SB1106 PNP Silicon Power Transistor

The 2SB1106 (often abbreviated as B1106 in circuit markings) is a PNP silicon power transistor designed for medium power amplification and high-voltage switching. It is frequently utilized in the output stages of audio amplifiers and for driving various industrial loads such as relays or small motors. With a -120 Volt rating, it offers a solid safety margin for circuits operating in the 60V to 80V range. It is the PNP complement to the 2SD1606 NPN transistor, allowing them to be used together in complementary push-pull configurations. The TO-126 package is compact and efficient, offering a metal tab for easy heat sink attachment. This is critical when the transistor is operating near its 20-Watt limit to ensure long-term thermal stability and prevent device failure.

Key Features:

Continuous collector current (IC) capability of -1.5 Amperes.

Peak collector current (ICP) of -3.0 Amperes.

Total power dissipation (PC) of 20 Watts at 25 degrees Celsius case temperature.

High DC current gain (hFE) typically 100 to 400.

Standard TO-126 (or TO-126ML) package for medium power electronics.