2SK2676 N-Channel Power MOSFET

The 2SK2676 is an N-channel enhancement mode power field-effect transistor designed primarily for high-voltage switching applications. With a 900-Volt rating, it is specifically built to handle the high-voltage spikes and operational demands of off-line switch-mode power supplies (SMPS), DC-DC converters, and motor control systems. The device features high-speed switching and low gate charge, which helps in reducing switching losses and improving overall circuit efficiency. One of its practical advantages is the TO-220F "Full Pack" package; this plastic-encapsulated housing provides electrical insulation between the internal transistor leads and the external heat sink. This eliminates the need for an additional mica or silicone insulating washer, making the mechanical assembly faster and more reliable in production environments.

Key Features:

Continuous drain current (ID) capability of 5.0 Amperes.

Drain to source on-state resistance (RDSon) typically 2.0 Ohms.

High speed switching capability for efficient power conversion.

High gate breakdown voltage of +/- 30 Volts.

Standard TO-220F (Full Pack) insulated package for safety.