IXGK120N60 High Current IGBT

The IXGK120N60 is a high-power N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-current switching applications. It combines the high input impedance of a MOSFET with the low on-state conduction losses of a bipolar transistor. This device is particularly well-suited for heavy-duty industrial applications such as AC motor drives, DC servo and robot drives, uninterruptible power supplies (UPS), and high-power welding equipment. The IXGK120N60 is built to withstand high energy levels and features a robust design that minimizes EMI and switching noise. Its massive TO-264 package is specifically designed to manage the substantial heat generated during high-current operation, requiring a large heat sink for optimal performance. Given its 120 Ampere rating and 600 Volt capacity, it is a primary choice for engineers designing robust, high-efficiency power conversion systems.

Key Features:

Continuous collector current (IC) of 120 Amperes at 25 degrees Celsius.

Low collector emitter saturation voltage (VCEsat) typically 2.1 Volts.

Very high current handling capability and low switching losses.

High power dissipation (PD) rating of 600 Watts.

Large TO-264 package for superior thermal conductivity.