FQPF2N60 N-Channel QFET MOSFET

The FQPF2N60 is an N-channel enhancement mode power field-effect transistor produced using proprietary planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are well suited for high-efficiency switched-mode power supplies (SMPS), active power factor correction (PFC), and electronic lamp ballasts based on half-bridge topology. The TO-220F package provides a high degree of electrical insulation between the internal leads and the external heatsink, which simplifies the mechanical design by removing the need for separate insulating hardware. This makes the FQPF2N60 a practical and cost-effective choice for compact power conversion applications.

Key Features:

Continuous drain current (ID) of 2.0 Amperes at 25 degrees Celsius.

Low drain to source on-state resistance (RDSon) of 4.7 Ohms.

Low gate charge (Qg) typically 9.0 nanocoulombs for fast switching.

100% avalanche tested for high reliability.

Fully insulated TO-220F package (Full Pack) for easy mounting.