BUV21 NPN Silicon Power Transistor

The BUV21 is an NPN silicon multiepitaxial planar power transistor specifically designed for high-speed, high-current, and high-power applications. As part of the Switchmode series, this device is ideal for use in high-performance switching regulators, DC-DC converters, and motor drivers in both industrial and military equipment. Its ability to handle a continuous collector current of up to 40 Amperes and a voltage of 200 Volts makes it a versatile choice for heavy-duty power management systems, including high-power audio amplifiers and linear power supplies. The transistor features very fast switching times and low saturation voltages, which significantly reduce conduction and switching losses to improve overall system efficiency. Housed in a hermetically sealed TO-3 metal can, the BUV21 ensures exceptional thermal stability and durability in demanding environments.

Key Features:

Collector emitter voltage (VCEO) rating of 200 Volts.

Total power dissipation of 250 Watts at 25 degrees Celsius case temperature.

Low collector emitter saturation voltage typically 0.6 Volts at 8 Amperes.

High DC current gain (hFE) with a minimum of 20 at 12 Amperes.

Robust TO-3 (TO-204AE) metal can package for superior heat management.