2N3820 P-Channel Silicon Junction Field Effect Transistor

The 2N3820 is a P-channel silicon junction field effect transistor (JFET) designed primarily for low level audio and general purpose applications. It is well-suited for circuits featuring high impedance signal sources because of its high input impedance characteristics. As a voltage-controlled device, the 2N3820 can function effectively as an amplifier or a voltage-controlled resistor in sensitive signal processing tasks. Its robust design allows for reliable operation across a temperature range of -55 to 150 degrees Celsius. The device is commonly utilized in analog switches, multiplexers, and buffer configurations within industrial and consumer electronics. Housed in the industry-standard TO-92 package, it provides a cost-effective and space-efficient solution for through hole PCB designs.

Key Features:

Drain to gate breakdown voltage (VDG) of -20 Volts.

Gate to source breakdown voltage (VGS) of 20 Volts.

Zero-gate voltage drain current (IDSS) ranging from -0.3 to -15 Milliamperes.

Maximum total power dissipation of 350 Milliwatts.

Standard TO-92 through hole plastic package.