IRF2807ZS, N-Channel HEXFET® Power MOSFET, D2Pak Package

SKU
SCTx2579
Part Number
F2807ZS
Brand:
Delivery in 2-5 Weeks.
Pre-Order
Out Of Stock

Notify me when this product is available:

Guarantee safe & secure checkout

The IRF2807ZS is an N-channel HEXFET® power MOSFET designed for high-power switching applications. With a drain-source voltage rating of 75 V and a continuous drain current of 75 A, it is well-suited for various power control applications. The MOSFET's low on-resistance of 9.4 mΩ reduces conduction losses, while its fast switching capabilities enhance performance in high-speed circuits. Encased in a D2Pak surface-mount package, the IRF2807ZS offers robust thermal performance, making it a reliable choice for demanding power management applications.


Key Features:
  • Low On-Resistance: RDS(on) of 9.4 mΩ, minimizing conduction losses.
  • High Drain-Source Voltage: Withstands up to 75 V, suitable for various power applications.
  • High Continuous Drain Current: Rated at 75 A, ideal for high-power requirements.
  • Fast Switching Speed: Enhances efficiency in high-speed operations.
  • Robust Power Dissipation: Capable of dissipating up to 170 W, ensuring reliability under demanding conditions.
  • D2Pak Surface-Mount Package: Facilitates efficient heat dissipation and space-saving designs.
More Information
Mounting Style Surface Mount
Max Voltage N/A
Write Your Own Review
Only registered users can write reviews. Please Sign in or create an account
 

Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1-2 Day

Free

Available

Inside Jordan

1 - 3 Days

3 JOD / Free Above 100 JOD

pre-order

General

3-5 Weeks