GP50B60PD1, 600V 75A NPT IGBT with Ultrafast Diode, TO-247-3

The GP50B60PD1 is a high-performance NPT IGBT designed for demanding power applications. With its high voltage and current capabilities, integrated ultrafast diode, and fast switching performance, it is ideal for use in telecom and server SMPS, PFC and ZVS SMPS circuits, uninterruptible power supplies, and consumer electronics power supplies. The device's robust thermal performance and standard TO-247-3 package ensure reliable operation in various environments.​

Key Features:

• High Voltage and Current Capability: Supports up to 600V Collector-Emitter Voltage and 75A Collector Current at 25°C.​
• Integrated Ultrafast Diode: Features a HEXFRED Ultrafast Soft-Recovery Diode for efficient switching.​
• Low Saturation Voltage: Typical V_CE(on) of 2.00V at 33A, reducing conduction losses.​
• Fast Switching Performance: Suitable for high-frequency applications up to 150kHz.​
• Robust Thermal Performance: Maximum power dissipation of 390W and operating junction temperature up to 150°C.​
• Standard TO-247-3 Package: Facilitates easy mounting and efficient heat dissipation.​

Additional Specifications:

• Mounting Style: Through Hole
• Collector-Emitter Voltage (VCEO) : 600V
• Maximum Gate Emitter Voltage: 20V
• Continuous Collector Current at 25 C: 75A
• Power Dissipation: 390W
• Operating Temperature Range: -55+150°C