IRFBG30, N-Channel MOSFET, TO-220AB, 1000V, 3.1A

The IRFBG30 is a high-performance N-channel MOSFET designed for high-speed switching in high-voltage applications. With a drain-source voltage rating of 1000V and a continuous drain current of 3.1A, this MOSFET is optimized for use in power electronics such as switching regulators, motor drives, and high-voltage power supplies. Its low RDS(on) of 5Ohm ensures efficient performance with minimal power losses.

Housed in a TO-220AB package, the IRFBG30 offers excellent thermal management and high power dissipation, making it ideal for medium-power circuits where high voltage and fast switching are required.

• High Voltage Capability: Supports up to 1000V drain-source breakdown voltage for high-voltage applications.
• Current Rating: Continuous drain current of 3.1A at 25C, designed for medium-power switching applications.
• Low On-Resistance: RDS(on) of 5Ohm ensures minimized conduction losses and improved efficiency.
• Fast Switching: Optimized for high-speed switching with low gate charge and fast recovery times.
• High Power Dissipation: Can dissipate up to 125W, suitable for power circuits.
• Applications: Ideal for switching regulators, high-voltage power supplies, and motor drives.