BU326A ,NPN Silicon Power Transistor, 900V High Voltage, 8A Peak Collector Current

The BU326A NPN Silicon Power Transistor is a robust and high-performance component designed for high-voltage, high-speed switching applications. With a collector-emitter voltage of 900V and a peak collector current of 8A, this transistor is ideal for use in demanding environments, such as chopper supplies in CTV receivers and industrial circuits.

Encased in a durable TO-3 package, the BU326A provides excellent thermal dissipation and mechanical stability. It is optimized for applications requiring low collector saturation voltage and high-speed operation. This transistor delivers reliable performance under varying conditions, thanks to its wide operating temperature range and high total power dissipation capability.

Key Features :

• High collector-emitter voltage (VCEO) of 900V for superior high-voltage performance.
• Peak collector current of 8A, ensuring robust power handling for demanding applications.
• Low collector-emitter saturation voltage of 1.5V at IC = 4A, ensuring high efficiency.
• Encased in a TO-3 package for excellent heat dissipation and mechanical stability.
• Suitable for high-speed switching with a transition frequency of 4 MHz.
• Wide operating temperature range of -65C to 200C, making it ideal for industrial and high-power circuits.